多次可编程非易失性存储器的数据保持能力测试及其激活能分析

Data Retention Capability Test of Multi-Time Programmable Non-Volatile Memory and Its Activation Energy Analysis

基于180 nm BCD工艺平台设计开发了32 Kibit的多次可编程(MTP)非易失性存储器(NVM)。详细描述了存储单元的结构设计特点、操作机理及影响非易失性的关键因素。测试并量化了其在高温条件下的数据保持能力,并根据Arrhenius模型设计了高温老化试验,进而计算其浮栅上电荷泄漏的激活能。经过10^(4)次重复编程和擦除循环后,MTP NVM样品的高温数据保持(HTDR)能力验证结果表明该MTP NVM产品具有很好的可靠性。通过高温老化加速试验,计算出分别在100、125和150℃条件下样品的数据保持时间,并对1/T与数据保持时间曲线进行数学拟合,计算出在该180 nm BCD工艺平台下浮栅上电荷泄漏的激活能。

A 32 Kibit multi-time programmable(MTP)non-volatile memory(NVM)was designed and developed based on 180 nm BCD process platform.The design feature of the memory cell structure,operation mechanism and key factors affecting non-volatility were described in detail.The data retention capability at high temperature was tested and quantified.The high temperature aging test was designed to calculate its activation energy of charge leakage on the floating gate according to the Arrhenius model.After 10^(4) cycles of programming and erasing,high temperature data retention(HTDR)capability verification results of MTP NVM samples show that the MTP NVM products have good reliability.Through the high temperature accelerated aging test,the data retention time of samples at 100,125 and 150℃ was calculated,respectively.The activation energy of charge leakage on the floating gate based on 180 nm BCD process platform was calculated by mathematically fitting the curves of 1/T and data retention time.