IGBT芯片静态输出曲线连续测量方法

Continuous Measurement Method for Static Output Curve of IGBT Chips

绝缘栅双极型晶体管(IGBT)芯片的静态输出曲线是考核其能量损耗及指导多芯片并联设计的重要指标之一。现有测量IGBT静态输出曲线的方法多采用商用化的功率器件分析仪,然而商业化功率器件分析仪存在价格昂贵、夹具单一的问题。亟需开发一种简单、快速、有效的静态输出曲线测量方法。面向高压IGBT芯片,提出一种新的静态输出曲线连续测量方法及测试电路,有效减小了IGBT芯片的电导调制效应和温升效应对静态输出曲线的影响。通过实时测量动态过程中的电压及电流,可以快速得到IGBT芯片静态输出曲线。通过对比本文连续法与功率器件分析仪的测量结果,证明了所提方法的有效性。

The static output curve of an insulated gate bipolar transistor(IGBT)chip is one of the important indicators for evaluating energy loss of the chip and guiding the parallel design of multiple chips.The existing methods for measuring the static output curves of IGBTs mostly use commercial power device analyzers.However,commercial power device analyzers have the problems of high cost and less fixtures.It is urgent to develop a simple,fast and effective method for the static output curve measurement.A new method for continuous measurement of static output curves and test circuits were proposed for high-voltage IGBT chips,which effectively reduced the influences of the conductance modulation effect and temperature effect of IGBT chips on the static output curve.Through real-time measurement of voltage and current in the dynamic process,the static output curve of IGBT chips can be quickly obtained.The effectiveness of the proposed method was proved by comparing with the measurement results of the continuous method and the power device analyzer.