旋转摩擦挤压加温法制备金刚石表面Ti涂层

Fabrication of Ti layer on diamond surface with rotary friction extrusion heating method

为了实现金刚石表面金属化,提出了一种旋转摩擦挤压加温法在人造单晶金刚石表面制备Ti涂层。利用SEM和XRD,分析了Ti涂层内表面的微观形貌和界面间的物相组成,并采用能谱仪进行了元素分析,研究了扩散退火温度和保温时间对Ti涂层内表面物相组成的影响,并分析了金刚石/Ti涂层的界面形成机制。研究结果表明:经过旋转摩擦挤压涂覆,在金刚石表面形成了均匀、致密的Ti涂层。经过600℃保温0.5 h的扩散退火,Ti涂层内表面生成了点状的TiC晶粒,实现了金刚石与Ti涂层的化学结合。随着扩散退火温度的升高与保温时间的延长,TiC晶粒形貌由点状生长为棒状,界面TiC含量随扩散退火温度提高而增加。旋转摩擦挤压加温法在金刚石表面形成Ti涂层可分为五个阶段,即旋转摩擦挤压初始阶段、初级扩散阶段、二级扩散阶段、TiC成核阶段和TiC生长阶段。

In order to realize metallization of the diamond surface,a rotary friction extrusion heating method is proposed to fabricate Ti layer on the surface of artificial single crystal diamond.The micromorphology of the inner surface of Ti layer and the phase composition of the interface between the diamond and Ti layer were analyzed with a scanning electron microscope and an X-ray diffractometer,and element analysis was carried out with an energy disperse spectrometer.The effect of diffusion annealing temperature and holding time on phase composition of the inner surface of Ti layer was studied.The formation mechanism of the diamond/Ti layer interface was analyzed.The research results show that a uniform and dense Ti layer is formed on the diamond surface after rotary friction extrusion.After diffusion annealing at 600℃for 0.5 h,dot-shaped TiC grains were formed on the inner surface of Ti layer,and the chemical combination between diamond and Ti layer was realized.With the increase of diffusion annealing temperature and holding time,the morphology of TiC grains grows from dot-shaped to rod-shaped.The mass fraction of TiC of the interface increases with the increase of diffusion annealing temperature.The formation of Ti layer on the diamond surface with rotary friction extrusion heating method can be divided into five stages:initial stage,primary diffusion stage,secondary diffusion stage,TiC nucleation stage and TiC growth stage.