衬底温度对铌薄膜组织结构及界面结合性能的影响

Effect of Substrate Temperature on Structure and Interfacial Bonding Properties of Niobium Films

为获得组织结构及界面结合性能优异的铌薄膜,采用直流偏压二极溅射技术在无氧铜表面溅射制备铌薄膜,借助SEM、AFM、XPS、划痕仪等分析衬底温度对膜层组织结构和界面结合能力的影响。结果表明:随衬底温度的提高,铌薄膜表面的颗粒尺寸增大,表面粗糙度由Ra 27.6 nm增加到Ra 65.3 nm,薄膜厚度从2.832μm增加到6.021μm。随衬底温度的提高,氧化现象减弱,衬底温度在400℃条件下制备的膜层中氧含量最低,仅占7.47%,膜层中仅有轻微的氧化现象,说明溅射所制备的铌薄膜纯度较高,膜层中的杂质含量少。衬底温度改变时,铌薄膜与基体的界面结合能力没有发生明显的变化,界面结合强度均高于50 N。

In order to obtain niobium films with excellent structure and interfacial bonding properties,the niobium film was prepared on the surface of oxygen-free copper via DC bias diode sputtering technology.With the characterization of SEM,AFM,XPS,and scratch tester,the influence of substrate temperature on film structure and interface bonding ability is analyzed.The results show that with the increase of substrate temperature,the particle size of niobium film rises,the surface roughness rises from Ra 27.6 nm to Ra 65.3 nm,and the film thickness rises from 2.832μm to 6.021μm,respectively.With the increase of substrate temperature,the oxidation phenomenon weakens.The oxygen content in the films prepared at 400℃is the lowest,accounting for only 7.47%.There is only slight oxidation phenomenon in the film,which indicates that the niobium film prepared by sputtering has high purity and less impurity contents.When the substrate temperature is changed,the interfacial bonding strength between niobium film and substrate does not change significantly,and the interfacial bonding strength is higher than 50N.