射频磁控溅射ITO薄膜对TOPCon太阳电池光电性能的影响

Effect of RF Magnetron Sputtered ITO Film on Photoelectric Property of TOPCon Solar Cells

通过射频(RF)磁控溅射分别在光学玻璃基底上和多晶硅薄膜层上沉积了氧化铟锡(ITO)薄膜,采用Hall效应测试仪测试了ITO薄膜的电阻率和载流子浓度等参数,研究溅射功率和溅射时间等参数对ITO薄膜的光电特性影响。测试多晶Si对称结构沉积ITO薄膜前后及退火后的隐开路电压和反向饱和电流密度等参数,研究ITO薄膜对n型晶硅太阳电池钝化接触的影响。研究结果表明:在纯氩气氛围下、溅射功率为200 W、溅射时间为15 min、转速为10 r/min、工作气压为1 Pa,在250℃退火10 min条件下,ITO薄膜光电性能最佳,退火后的电阻率为2.863×10^(-4)Ω·cm,退火后的隐开路电压为721 mV,n型隧道氧化物钝化接触(TOPCon)太阳电池平均光电转换效率为23.6%。

The indium tin oxide(ITO)films were deposited on the optical glass substrate and poly-Si film layer by radio frequency(RF)magnetron sputtering,respectively.The resistivity,carrier concentration and other parameters of the ITO films were measured by Hall effect tester.The effects of the sputtering power,sputtering time and other parameters on the photoelectric properties of the ITO films were studied.The implied open circuit voltage,reverse saturation current density and other parameters were measured before and after ITO films deposition and after annealing for poly-Si symmetrical structure,and the effect of the ITO films on the passivation contact of n-type crystalline silicon solar cells was studied.The results show that under the conditions of the pure argon atmosphere,the sputtering power of 200 W,the sputtering time of 15 min,the rotating speed of 10 r/min,the working air pressure of 1 Pa and annealing at 250℃ for 10 min,the photoelectric properties of the ITO films are the best,the resistivity after annealing is 2.863×10^(-4)Ω·cm,the implied open circuit voltage after annealing is 721 mV,and the average photoelectric conversion efficiency of the n-type tunnel oxide passivated contact(TOPCon)solar cell is 23.6%.