极薄钨单质种子层制备形貌疏松的三氧化钨薄膜的电致变色性能研究

Electrochromic Properties of WO_(3) Thin Films Prepared with Loose Morphology from Very Thin W Films

氧化钨薄膜(WO_(3))具有出色的电致变色性能,但是目前物理法制得的WO_(3)薄膜形貌往往比较致密,从而影响其变色性能和循环寿命.本文采用磁控溅射方法,首先在ITO透明导电基底上制备一层极薄的钨(W)单质薄膜,之后在W薄膜上方制备WO_(3)薄膜,通过调控W单质薄膜的疏松形貌对WO_(3)薄膜形貌进行调控以提高其电致变色性能.为了保证薄膜在透明态时具有较高的透过率,钨单质薄膜的厚度选择1 nm,WO_(3)薄膜的厚度选择350 nm,得到WO_(3)/W复合薄膜,通过与单一WO_(3)薄膜对比,探索极薄单质W薄膜对WO_(3)薄膜形貌、晶体结构及电致变色性能的影响.结果表明,WO_(3)/W复合薄膜表现出更短的着色响应时间(23.5 s);且着色断电48 h后,其透射率在550 nm处仅增加了18%,表现出更好的记忆效应.极薄W单质薄膜的引入实现了对WO_(3)薄膜的形貌调控,提高了其部分电致变色性能.

WO_(3) has attracted great attention from researchers because of its excellent electrochromic properties.However,the morphology of WO_(3) films prepared by physical method is generally dense,which affects their electrochromic performance and cycle life.Herein,a very thin W film was first prepared on ITO transparent conductive substrates by magnetron sputtering,and then WO_(3) film was prepared above it.It was expected that the loose morphology of W films could regulate the morphology of WO films and improve their electrochromic properties.To ensure the high transmittance of the film in its bleached state,the WO_(3)/W composite film was composed of 1 nm W super-thin film and 350 nm WO_(3) film.By comparing with a single WO_(3) film,effects of W film on the morphology,crystal structure and electrochromic properties of WO_(3) films were explored.It turned out that the WO_(3)/W composite film required shorter coloring response time(23.5 s),and after being colored for 48 h,its transmittance increased by only 18%at 550 nm,showing better memory effect.The introduction of W films regulated the morphology of WO_(3) films and improved part of their electrochromic properties.