一种GaN功率器件驱动电路优化设计

Optimal Design of Gallium Nitride Power Device Driving Circuit

针对GaN功率器件在应用的过程中可能出现误导通、电压尖峰与振铃、过电压、过电流等问题,通过简要分析GaN功率器件驱动回路、过电压、过电流故障问题出现原因,设计一种GaN功率器件独立拉灌输出、过电流分级保护栅极驱动电路。当GaN功率器件出现额定电流两倍以内的过电流现象时,可实现GaN功率器件快速关断;当GaN功率器件出现额定电流两倍以上过电流现象时,可实现GaN功率器件缓慢关断,对GaN开关器件电流故障做出动作保护。利用LT-spice仿真软件和实验平台的搭建,验证设计的合理性。

Gallium nitride(GaN)power devices in the process of application may appear misdirection,voltage peak and ringing,overvoltage,overcurrent problems. According to briefly analyze the dynamic characteristics of GaN power devices and the causes of fault problems,an independent pull irrigation output and overcurrent classification protection gate driver of GaN power device was designed. When the over-current phenomenon within two times of the switch tube occurs,the switch tube can be quickly turned off. When the over-current phenomenon of the switch tube occurs more than twice,the switch tube can be slowly turned off to protect the device. The rationality of the design was verified by LT-spice simulation software and the establishment of experimental platform.