基于Au/KMnAgSe_(2)/Ag结构存储器的阻变效应研究

Study of the Variable Resistance Effect Based on Au/KMnAgSe;/Ag Structured Memory

采用高温固相法合成具有层状结构的KMnAgSe_(2),并首次将其作为阻变层材料制备成结构为Au/KMnAgSe_(2)/Ag的阻变器件。通过一系列电学测试研究了该夹层结构器件的阻变性能,研究表明Au/KMnAgSe_(2)/Ag器件具有明显的双极性阻变特性,并表现出较优的稳定性和非易失性。在经历连续200次的循环测试或103s的时间后电阻开关比仍旧保持在10以上。本实验研究结果为KMnAgSe_(2)应用到阻变存储器件中提供了材料基础和理论指导,将有望成为一种极具潜力的新型非易失性存储器。

KMnAgSe;with layered structure was synthesized by high temperature solid-state method and was first fabricated as a variable resistance layer into a resistive switching device structured as Au/KMnAgSe;/Ag. The variable resistance properties of this sandwiched structure are investigated through a series of electrical measurements. The results show that the Au/KMnAgSe;/Ag device has obvious bipolar variable resistance characteristics, which exhibits excellent stability and non-volatility. The resistance ratio remains above 10 after experiencing 200 consecutive cycle tests or 103 s.The results of this experimental study provide material basis and theoretical guidance for the application of KMnAgSe;in resistive random access memory, and it will be expected to become a new type of non-volatile memory with great potential.