应用Ti掺杂提高VO_(2)薄膜太阳光红外能量调制能力

Enhanced Solar IR Energy Modulation Capability of VO_(2) Thin Films by Employing Ti-doping

二氧化钒薄膜独特的半导体-金属相变特性使其在智能窗等领域有着广阔的应用前景。该研究采用直流反应共溅射技术沉积二氧化钒薄膜,通过调节Ti靶的放电电流,实现了VO_(2)薄膜不同量的Ti掺杂。并用X射线衍射仪、微区拉曼光谱仪、扫描电子显微镜、分光光度计与四探针测量系统对样品微结构及相变特性进行表征,分析不同Ti掺杂量对VO_(2)薄膜微结构、表面形貌、相变温度、红外调制率的影响。研究结果表明,在Ti靶15 mA放电电流下掺杂的样品,太阳能调制能力有明显提高,达13.8%,但是过高的Ti掺杂则会使VO_(2)薄膜相变性能弱化甚至消失。

The vanadium dioxide(VO2)film has broad applications in smart windows and other application fields due to its unique semiconductor-metal phase transition characteristics.The VO_(2) films were deposited by DC reactive co-sputtering technology in this study.By adjusting the discharge current of the Ti target,different amounts Ti-doping of VO2 films was achieved.The samples microstructure and phase transition characteristics were characterized by XRD,Micro-Raman spectrophotometer,SEM,spectrophotometer,and four-probe system.The effects of Ti doping levels on the microstructure,surface morphology,phase transition temperature and IR modulation capability of the VO_(2) films are analyzed.The research results show that the solar energy modulation capability of the doped sample at 15 mA discharge current with a Ti target is significantly improved,reaching 13.8%.However,an excessive amount of Ti doping will weaken or even disappear the phase transition performance of the VO_(2) film.