抑制或消除RC-IGBT回跳现象的技术发展概述

Overview of technological development for suppressing or eliminating voltage snap-back phenomenon in RC-IGBT

逆导型绝缘栅双极型晶体管(RC-IGBT)以其良好的软关断特性、短路特性以及良好的功率循环特性等优点,成为现在半导体功率器件技术领域研究的热点。RC-IGBT在拥有众多优点的同时,最典型的问题就是电压回跳现象,如何抑制或消除器件开启初期固有的回跳现象是RC-IGBT器件领域的技术关键。通过对RC-IGBT领域的国内外专利申请进行整理、分析,具体介绍了解决RC-IGBT器件回跳问题的五个主要技术分支:引导IGBT区法、阻断电子电流法、强化集电极短路电阻法、超结结构法、绝缘分离法,并展示了相应的典型器件结构、工作原理及其技术效果,为完全消除RC-IGBT的回跳现象以提升器件整体性能指明了技术发展方向。

Reverse conducting insulated gate bipolar transistor(RC-IGBT)has become a hot spot in the field of semiconductor power device technology.How to suppress or even eliminate the inherent snap-back phenomenon at the beginning of device opening has become the focus and critical technique in the field of RC-IGBT devices.By analyzing patent applications in the RC-IGBT field,five main technical branches are identified to solve the snap-back phenomenon,namely,pilot IGBT region method,blocking electron current method,strengthening collector short circuit resistance method,super-junction structure method,and insulation separation method.The typical device structures,their working principle and technical methods are surveyed.The technical development direction is prospected for eliminating the snap-back phenomenon completely and improving the overall performance of the RC-IGBT.