垂直Cu_(2)ZnSnS_(4)纳米线太阳能电池吸收层的研究与制备

Study and Fabrication of Vertical Cu_(2)ZnSnS_(4) Nanowire Solar Cell Absorption Layer

采用两步电化学沉积法制备了CZTS薄膜和CZTS纳米线阵列,对450~650℃硫化温度下的CZTS薄膜的形貌和物相结构进行了分析,结果表明:在550℃硫化条件下可以获得锌黄锡矿相的CZTS。以阳极氧化铝(AAO)作为模板,采用了"先硫化,后移除AAO模板"和"先移除AAO模板,后硫化"两种方式对Cu-Zn-Sn预制层进行处理,得到了垂直形貌的CZTS纳米线,保证了纳米线的完整性和较好的垂直度。在0.2~2μm入射光波范围,与CZTS薄膜相比,CZTS纳米线平均反射率降低20%,展现了良好的减反射特性,有利于增大吸收层的吸收;同时也通过优化硫化工艺顺序为制备垂直的CZTS纳米线提供了新思路。

CZTS thin films and CZTS nanowire arrays were prepared by two-step electrochemical deposition method.The morphology and phase structure of CZTS thin films sulfurized at 450~650℃were analyzed.The results show that kesterite phase CZTS can be obtained at 550℃were analyzed.Using anodic aluminum oxide(AAO)as template,the Cu-Zn-Sn precursor layers were treated by“first sulfurize and then remove AAO”and“first remove AAO and then sulfurize”.CZTS nanowires with vertical morphology were obtained,which ensured the integrity and good verticality of nanowires.In the range of 0.2~2μm incident light wave,the average reflectivity of CZTS nanowires is reduced by 20%compared with CZTS thin films,showing good antireflection properties,and is conductive to increasing the absorption of absorption layer.Meanwhile,a new idea is provided for the preparation of vertical CZTS nanowires by optimizing the sulfurization process sequence.