a-Si:H(p)/c-Si(n)异质结太阳电池的模拟优化

Simulation and optimization of a-Si:H(p)/c-Si(n)heterojunction solar cells

通过AFORS-HET软件模拟了TCO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n)/Ag结构的硅异质结电池中硅衬底电阻率、本征非晶硅薄膜厚度、发射极材料特性以及TCO功函数对电池性能的影响。结果表明:在其它参数不变的条件下,硅衬底电阻率越低,转换效率越高;发射极非晶硅薄膜厚度对短路电流有较大影响,发射极掺杂浓度低于7.0×10^(19)cm^(-3)时,电池各项性能参数都极差;TCO薄膜功函数应大于5.2 eV,以保证载流子的输运收集。

The performance of heterojunction solar cells with structure TCO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n)/Ag is simulated via AFORS-HET software when varying the resistivity of silicon wafer、the thickness of intrinsic a-Si:H film、properties of p-a-Si:H and the work function of TCO film.It is shown that the conversion efficiency increases with decreasing of silicon wafer resistivity.The thickness of p-a-Si:H film has a greater impact on short circuit density and the performance parameters will become really bad when the doping of p-a-Si:H film is below 7.0×1019 cm-3.The work function of TCO film should be higher than 5.2 eV in order for an efficient carrier collection.