摘要
在真空环境中进行原子级别的薄膜生长,基板的表面温度监控是关键技术之一。针对不同尺寸的基板,通过热电偶测试基板近旁的温度和红外测温仪测试基板表面的温度,经过数据拟合获得两种测试方法所得温度的对应关系,基板表面的温度与近旁温度存在偏差,但两者之间存在较好的线性比例关系。
The monitoring and controlling of substrate surface temperature is one of the key technologies to grow atomic-scale thin films in vacuum. For substrates withdifferent size, the temperatures near and of the substrate surface were measured by thermocoupleand infrared thermometer respectively.The corresponding relationship between the two temperatures was obtained by data fitting. The result shows thatthere is a deviation between the two temperatures, but the linear proportional relationship is good.
作者
石晓倩
郭方准
SHI Xiao-qian;GUO Fang-zhun(School of Mechanical Engineering,Dalian Jiaotong University,Dalian 116028,China)
出处
《真空电子技术》
2022年第1期72-75,共4页
Vacuum Electronics
基金
辽宁省教育厅“攀登学者”项目。
关键词
真空加热
薄膜制备
真空温度
热辐射
电子轰击
Vacuum heating
Thin film preparation
Vacuum temperature
Thermal radiation
Electron bombardment
