Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor

The input/output(I/O)pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge(ESD)protection devices.It is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier(NBL-GCSCR)manufactured by the 0.18µm standard bipolar-CMOS-DMOS(BCD)process to meet this need.Therefore,we propose an on-chip integrated novel deep N-well gate-controlled SCR(DNW-GCSCR)with a high failure level to effectively solve the problems based on the same semiconductor process.Technology computer-aided design(TCAD)simulation is used to analyze the device characteristics.SCRs are tested by transmission line pulses(TLP)to obtain accurate ESD parameters.The holding voltage(24.03 V)of NBL-GCSCR with the longitudinal bipolar junction transistor(BJT)path is significantly higher than the holding voltage(5.15 V)of DNW-GCSCR with the lateral SCR path of the same size.However,the failure current of the NBL-GCSCR device is 1.71 A,and the failure current of the DNW-GCSCR device is 20.99 A.When the gate size of DNW-GCSCR is increased from 2µm to 6µm,the holding voltage is increased from 3.50 V to 8.38 V.The optimized DNW-GCSCR(6µm)can be stably applied on target readout circuits for on-chip electrostatic discharge protection.