多芯片并联压接式IGBT器件多物理场耦合建模分析

Multi-physical Field Coupling Modeling Analysis of Multi-chip Parallel Press Pack IGBT Devices

多芯片并联压接式绝缘栅双极型晶体管(PP-IGBT)作为模块化多电平换流器(MMC)的核心部件,其可靠性备受关注,多物理场建模是研究其失效机理及可靠性的重要手段。首先,搭建两个单芯片模块并联试验平台证明不同温度差异对电流分布的影响,并建立硅芯片电阻率与温度耦合模型。其次,基于封装结构、材料属性、硅芯片电阻率与温度关系等建立3 300 V/1 500 A PP-IGBT多物理场耦合模型,来分析其电、热参数分布。结果表明:器件内部存在温度应力分布不均现象,最大电流应力位于边角位置,最大温度应力位于中心位置。

Multi-chip parallel press pack insulated gate bipolar transistor(PP-IGBT)is the core component of modular multilevel converter(MMC),which has attracted much attention,and multi-physical field modeling is an important me-thod to study its failure mechanism and reliability.Firstly,the experimental platform is founded to prove the influence of temperature differences on current distribution using two parallel single chip modules,and the coupling model of silicon chip resistivity and temperature is established.Secondly,based on the physical structure,device material proper-ties,the relationship between silicon chip resistivity and temperature and so on,the multi-physical field coupling mod-el of the 3300 V/1500 A PP-IGBT is established to analyze the distributions of electric and thermal parameters.The results show that there is an uneven distribution of temperature stress among devices,the maximum current stress is located at the corner,and the maximum temperature stress is located at the center.