摘要
绝缘栅双极型晶体管(IGBT)模块的老化失效会对电力电子系统的可靠性造成不良影响,其中键合线疲劳是IGBT模块老化失效的主要原因之一。为探究键合线疲劳对IGBT模块的影响,通过ANSYS有限元仿真,定量分析键合线脱落与IGBT模块健康状态之间的联系,结果表明键合线脱落不仅会使IGBT模块的结温升高,键合线受到的热应力增大,而且还会增大芯片下方的焊料层等效塑性应变,加速IGBT模块的失效。
The aging failure of insulated gate bipolar transistor(IGBT)module will have a bad impact on the reliabili-ty of power electronic system,and bonding wire fatigue is one of the main reasons for the aging failure of IGBT mod-ule.In order to explore the influence of bonding wire fatigue on IGBT module,the relationship between bonding wire shedding and IGBT module health status through ANSYS finite element simulation is quantitatively analyzed.The re-sults show that bonding wire shedding will not only increase the junction temperature and thermal stress of IGBT module,but also increase the equivalent plastic strain of solder layer under the chip,and accelerating the failure of IGBT module.
作者
史明明
葛雪峰
任政燚
王宁会
SHI Ming-ming;GE Xue-feng;REN Zheng-yi;WANG Ning-hui(Electric Power Research Institute of State Grid Jiangsu Electric Power Co.,Ltd.,Nanjing 211103,China;不详)
出处
《电力电子技术》
CSCD
北大核心
2021年第12期65-68,共4页
Power Electronics
基金
国家电网有限公司科技项目(J2020079)。
关键词
绝缘栅双极型晶体管模块
可靠性
键合线
有限元仿真
insulated gate bipolar transistor module
reliability
bonding wire
finite element simulation
