面向高工作温度应用的带间级联红外光电器件

Interband cascaded infrared optoelectronic devices for high operating temperature applications

高温工作探测器是第三代红外焦平面发展的重要方向之一。带间级联探测器结合了势垒结构与多级吸收区结构的特点,通过多量子阱弛豫和隧穿实现光生载流子单方向输运,可以有效降低来自PN结耗尽区的产生-复合暗电流;利用多级短吸收区结构,在扩散长度很短的情况下仍然可以有效地收集光生载流子,从而可以提高探测器在高工作温度下的探测性能。本文主要介绍了作者在带间级联红外光电器件方面的研究进展,包括高工作温度带间级联探测器、高带宽带间级联探测器以及带间级联发光器件等。

High operating temperature infrared detector is one of the important development tendencies for the third-generation infrared focal plane.The interband cascade photodetectors take advantage of potential barrier structure and multistage absorption structure.Unidirectional transport of photogenerated carriers is achieved through relaxation and tunneling region which can reduce the generation-recombination current from the depletion region of the PN junction.The interband cascade detectors can effectively collect photo-generated carriers,and even the diffusion length is short utilizing the multiple and short absorption regions.So the detection performance can be improved at high operating temperature.In this paper,we present our recent research progress in the interband cascaded infrared optoelectronic devices,including high operation temperature infrared interband cascade detectors,high speed interband cascade detectors,and interband cascade light-emitting devices.