阱内δ掺杂GaSbBi单量子阱红外发光效率的光致发光光谱研究

Infrared emission efficiency ofδ-doped GaSbBi single quantum well by photoluminescence spectroscopy

采用变激发功率红外光致发光(Photoluminescence,PL)光谱方法研究四个不同阱内δ掺杂面密度的GaSb_(0.93)Bi_(0.07)/GaSb单量子阱(Single Quantum Well,SQW)及其非掺杂SQW参考样品。通过分析GaSbBi SQW和GaSb势垒/衬底成分的PL强度演化,发现阱内δ掺杂导致红外辐射效率显著降低,相对下降幅度约为33%-75%。进一步分析结果表明,发光效率下降来源于界面恶化引发的“电子损失”和阱内晶格质量下降导致的“光子损失”的共同作用。这一工作有望为稀Bi红外发光器件的性能优化提供帮助。

In this work,excitation power-dependent infrared photoluminescence(PL)measurements were carried out on four GaSb_(0.93)Bi_(0.07)/GaSb single quantum well(SQW)samples with different in-wellδ-doping density as well as the corresponding reference SQW samples without doping.PL integral-intensity evolutions of the GaSbBi SQW and the GaSb barrier/substrate show a significant decrease in the infrared emission efficiency caused by the in-wellδ-doping.The doping-induced relative decrease rate is about 33%-75%.Further analysis indicates that the reduction of the infrared emission efficiency is a co-consequence of the"electron loss"caused by the interfacial deterioration and the"photon loss"caused by the GaSbBi lattice quality deterioration.This work may be helpful in optimizing the performance of diluted Bi infrared light-emitting devices.