ZrO_(x)N_(y)薄膜的制备与低温电输运特性研究

Study on preparation of ZrO_(x)N_(y)film and its low temperature electrical transport characteristics

针对于测温应用中对低温温度计的性能需求,为了获得灵敏度高和测温区间宽的氮氧化锆(ZrO_(x)N_(y))电阻温度传感薄膜,系统研究了溅射气氛中O_(2)流量对ZrO_(x)N_(y)薄膜结构和低温电输运行为的影响。采用射频反应磁控溅射工艺,通过精细调整溅射沉积过程中的O_(2)流量在Al_(2)O_(3)基片上生长了系列ZrO_(x)N_(y)薄膜,测定了薄膜的晶体结构、形貌和低温电输运特性。结果表明,随着O_(2)流量(0—0.24×1.6667×10^(-8)m^(3)/s)的增大,ZrO_(x)N_(y)薄膜由单晶ZrN(002)相转变为ZrN和ZrO_(2)两相,低温电输运行为由半导体-超导向半导体-绝缘特性演变,电阻率在10^(3)—10^(8)μΩ·cm的范围内变化。薄膜的灵敏度和电阻温度系数的绝对值(|S|、|TCR|)均与生长气氛O_(2)流量呈正相关,在0.24×1.6667×10^(-8)m^(3)/s的O_(2)流量下达到了较高的|S|和|TCR|。生长气氛中O_(2)流量对薄膜低温电输运行为的显著影响为优化ZrO_(x)N_(y)低温温度计的性能提供了新的思路。

Aiming at the performance requirements of low temperature thermometers in temperature measurement applications,in order to obtain ZrO_(x)N_(y)resistance temperature sensing film with high sensitivity and wide temperature measurement range,the effect of O_(2)flow rate on ZrO_(x)N_(y)films’structure and low temperature electrical transport behavior in sputtering atmosphere was systematically studied.A series of ZrO_(x)N_(y)films were grown on Al_(2)O_(3)substrate by rfreactive magnetron sputtering,and the crystal structure,morphology and low temperature electrical trans-port characteristics of the films were measured.The results show that with the increase of O_(2)flow rate(0-0.24×1.6667×10^(-8)m^(3)/s),ZrO_(x)N_(y)film changes from single crystal ZrN(002)phase to ZrN and ZrO_(2)phase,and the low temperature electrical transport behavior changes from semi-conductor-superconducting to semiconductor-insulating properties.The resistivity varies in the range of 10^(3)-10^(8)μΩ·cm.Both the absolute value of the sensitivity and the temperature coeffi-cient of resistance(|S|,|TCR|)of the film are positively correlated with the O_(2)flow rate of the growing atmosphere,and high|S|and|TCR|are reached at an O_(2)flow rate of 0.24×1.6667×10^(-8)m^(3)/s.The significant effect of O_(2)flow rate on the low temperature electrical transport behav-ior of thin film in growing atmosphere provides a new idea for optimizing the performance of ZrO_(x)N_(y)low temperature thermometer.