碲镉汞探测器的回顾与展望(特邀)

Review and prospect of HgCdTe detectors (Invited)

20世纪50年代末,碲镉汞(HgCdTe)合金半导体材料的发明,奠定了热成像的技术和工程应用基础。1975年,美国提出基于第一代红外探测器的热成像通用组件概念——"模块化通用夜视热瞄镜"(Modular Common Thermal Night Sights,MCTNS),从此HgCdTe材料和探测器被大规模应用于军事领域。从HgCdTe材料的基本物理性质出发,分析了HgCdTe探测器的优点,认为HgCdTe探测器依然是目前性能最好的红外探测器,且正在向多元化方向发展,包括(但不限于)大面阵、平面结和异质结、双波段、甚长波、150 K级工作温度、雪崩探测器等。随着新结构、新模式、新机理、新方法、新工艺的进步,HgCdTe材料和探测器必将达到一个新高度,仍然是第四代主流的红外焦平面探测器。

In the late 1950 s,the invention of mercury cadmium telluride(HgCdTe) alloy semiconductor material built the foundation of thermal imaging technology and its engineering applications.In 1975,the United States put forward the concept of common thermal imaging modulars — —Modular Common Thermal Night Sights based on the first-generation infrared detector.Since then,HgCdTe materials and detectors have been widely applied in the military field.In this paper,the advantages of HgCdTe detector were analyzed from the perspectives of the basic physical properties of HgCdTe material.It was convinced that HgCdTe detector was still the best infrared detector.Furthermore,diversified HgCdTe detector technologies had been developed,which including but was not limited to large area array,planar junction and heterojunction,dual band,very long wavelength,150 K operating temperature,avalanche detector,etc.With the emerging of the new structure,new mode,new mechanism,new method and new technology,HgCdTe materials and detectors would be promoted to a new height and was the mainstream candidate of the fourth-generation infrared focal plane detector.