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基于InSb的新型红外探测器材料(特邀) 被引量:2

Novel InSb-based infrared detector materials (Invited)
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摘要 InSb单晶是制备工作于中波红外大气窗口(3~5μm)光子型探测器的典型光电转换材料,采用该单晶材料所制备的InSb红外探测器以高性能、大规格像元阵列、高稳定性和相对低成本为特点,广泛应用于军用红外系统和高端民用红外系统领域。然而,InSb红外探测器响应波长范围固定不可调节、响应仅限于短中波红外而对长波红外无响应、相对有限的载流子寿命制约器件高温工作性能等固有特点,限制了该型探测器在工程中的广泛应用。文中系统地介绍了基于InSb材料人们为改进上述不足所开展的新型材料及其光电响应方面的研究结果。这些材料主要包括:采用合金化方法改变InSb组分形成新型多元合金材料、采用量子结构形成新型低维探测材料。对于新型合金材料,介绍了材料的合金相图、带隙与合金组分的关系、带隙的温度关联特性,并给出采用该材料制备器件的典型光电性能;对于量子结构材料,介绍了材料的制备方法、带隙与量子尺寸的关系,以及采用该材料制备原型器件的典型光响应特性。最后,对新型InSb基红外探测材料与器件的发展趋势、关键问题、研究重点进行了探讨。 InSb crystal is one of typical infrared sensing materials for fabricating photonic InSb detector used in the mid-wavelength infrared spectral range between 3-5 μm.InSb infrared detector has been featured by excellent performance,capable for making large-scale arrays,high sensing stability and relative low costs.It has been widely used in military and high-end civilian infrared system.Nevertheless,some InSb coherent shortcomings,such as responding spectral range nonadjustability,long-wavelength infrared spectrum range undetectability,and relative low photo-generated carrier lifetime which limites high operating temperature performance of the detector,makes the InSb detector inefficient in engineering application.In this paper,it is systemically introduced the novel InSb-based materials developed for the purpose of improving the coherent features of InSb material.Those materials include complex alloy and low-dimensional quantum structural material based on InSb compound.For complex InSb-based semiconductor alloy material,phase diagram,relation between energy band gap and alloy composition,energy band gap variation with temperature were presented.Also typical infrared sensing performance of the detector with the novel alloy material was presented.For low-dimensional quantum InSb material,fabrication of the structure,relation between energy band gap and quantum structure size,and typical infrared photo-response of the prototype detector were presented.The tendency of the novel InSb-based infrared sensing material and its developing focus were discussed at the end.
作者 司俊杰 Si Junjie(China Airborne Missile Academy,Luoyang 471009,China;Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China;Henan Antimonide Infrared Detector Engineering Center,Luoyang 471009,China)
出处 《红外与激光工程》 EI CSCD 北大核心 2022年第1期71-89,共19页 Infrared and Laser Engineering
关键词 锑化铟 红外探测 红外材料 多元合金 纳米材料 indium antimonide infrared detection infrared material multicomponent alloy nanometer material
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