摘要
Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching measurements.The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gatedrain capacitance characteristic curves.Frequency-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric.Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.
基金
the National Natural Science Foundation of China under Grant 61822407,Grant 61527816,Grant 11634002,Grant 61631021,Grant 62074161,Grant 62004213,and Grant U20A20208
in part by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(CAS)under Grant QYZDB-SSW-JSC012
in part by the Youth Innovation Promotion Association of CAS
in part by the University of CAS
the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,CAS.
