厚膜陶瓷基片通孔填充工艺

Process of Thick Film Ceramic Substrate Via-filling

随着厚膜电路技术的发展,混合集成电路的集成度越来越高,要求提高混合集成电路陶瓷基片布线密度,而陶瓷基片双面布线是提高集成密度的较好方式之一。双面布线需要在厚膜陶瓷基片上制作通孔,并对通孔进行导体填充,以实现陶瓷基片正反两面电性能导通和散热等功能,而制作性能良好的导体孔柱是厚膜工艺的难点。重点介绍了通过优化填孔设备压力参数和掩膜孔径的工艺参数提高双面布线厚膜陶瓷基片通孔填充质量的工艺研究,实现提高厚膜陶瓷基片通孔填充效率和质量的目标。

With the development of thick film circuits technology,the integration of hybrid integrated circuits is becoming higher and higher.It is required to improve the wiring density of hybrid integrated circuits on ceramic substrate,and double-side interconnection is one of better ways to improve the integration density.The double-side interconnection needs via fabrication and via filling with conductor paste,to achieve double-side electrical conduction and thermolysis.The via fabrication and via filling with conductor paste are the difficulties of thick film process.The process experiments of improving thick film via-filling quality is studied by selecting the proper pressure parameters of via filling machine and vias dimension of stencils,so as to achieve the goal of increasing the thick film via filling efficiency and quality.