热处理温度对掺铽氧化锡薄膜发光性能的影响

Effect of heat treatment temperatureon the luminescence properties of terbium-doped tin-oxide thin films

铽离子(Tb^(3+))掺杂氧化锡(SnO_(2))薄膜往往需要通过高温热处理来激活Tb^(3+)离子,系统研究热处理温度对Tb^(3+)离子掺杂SnO_(2)薄膜发光性能的影响具有一定的现实意义。以氯化亚锡二水合物和氯化铽六水合物为前驱体,采用溶胶-凝胶法制备掺铽氧化锡(SnO_(2):Tb)薄膜,通过X射线衍射(XRD)、扫描电镜(SEM)、紫外-可见吸收光谱(UV-Vis)、光致发光谱(PL)等对薄膜样品的形貌结构和发光性能进行表征和分析。结果表明:随着热处理温度的提升,SnO_(2)薄膜结晶性增强,晶粒尺寸显著增大;铽离子(Tb^(3+))发光源于SnO_(2)的敏化作用,在1100℃下热处理时Tb^(3+)离子具有最佳的发光性能;Tb^(3+)离子发光强度的提升主要源于其本身光学活性及SnO_(2)敏化作用的增强。研究结果可为SnO_(2):Tb薄膜在发光器件中的应用奠定基础。

For terbium ion(Tb^(3+)) doped tin oxide(SnO_(2)) films, high temperature heat treatment required to activate Tb^(3+)ions. It is of great significance to systematically study the effect of heat treatment temperature on the luminescence properties of Tb^(3+)doped SnO_(2)(SnO_(2):Tb)thin films. With tin dichloride dihydrate and terbium(Ⅲ) chloride hexahydrate as precursors, terbium-doped tin-oxide thin films were prepared by sol-gel method. The morphology, structure and luminescence properties of the film samples were characterized and analyzed using X-ray diffraction(XRD), Scanning electron microscopy(SEM), Ultraviolet visible absorption spectroscopy(UV-Vis) and Photoluminescence spectroscopy(PL).The results showed that with the rising of heat treatment temperature, the crystallinity of tin oxide films was enhanced and the grain size increased significantly;due to the sensitization of terbium ion(Tb^(3+)) in SnO_(2), Tb^(3+)ion exhibited the optical luminescence properties when heat-treated at 1100 ℃;the improvement of the luminescent intensity of terbium ion(Tb^(3+)) was mainly attributed to the enhancement of its optical activity and the sensitization of SnO_(2). The result is expected to lay a foundation for the application of SnO_(2):Tb thin films in luminescent devices.