肖特基二极管高温反向偏置失效分析与改善

Schottky Diode High Temperature Reverse Bias Failure Analysis and Improvement

肖特基二极管在高温反向偏置(High Temperature Reverse Bias,HTRB)试验后失效,烘烤或化学开盖后芯片电参数恢复。通过超声扫描分层检查,确定失效原因来自芯片和封装的匹配。在芯片改善受限制的情况下,通过改善封装气密性、离子污染,解决了HTRB失效。同时系统探讨了从设计上预防气密性失效的方法。

Schottky diodes encounters reliability failure after high temperature reverse bias(HTRB),and the chip electrical parameters recovers after baking or chemical decapsulation.Through scanning acoustical tomography and package delamination inspection,root cause is the matching of chip and package integrity.In the case of limited chip reliability improvement,HTRB soft failure is solved by improving package moisture sensitivity and the ion contamination.At the same time,the prevention of package moisture sensitivity failure in design phase is discussed systematically.