全耗尽绝缘体上硅氧化铪基铁电场效应晶体管存储单元单粒子效应计算机模拟研究

Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO_(2)-based ferroelectric field-effect transistor memory cell

铁电场效应晶体管具有非挥发性、低功耗、读写速度快等优异的存储性能,是最有前景的新型半导体存储器件之一.为促进铁电场效应晶体管在辐射环境中的应用,本文利用计算机辅助设计软件对全耗尽绝缘体上硅氧化铪基铁电场效应晶体管存储单元的单粒子效应进行研究,分析了重离子不同入射位置及角度和漏极偏置电压对存储单元相关特性的影响.结果表明:重离子入射位置改变不会使氧化铪铁电层中相应的极化状态发生反向,但会影响存储单元输出电压瞬态变化,最敏感区域靠近漏-体结区域;随着重离子入射角度减小,存储单元输出电压峰值增大,读数据“0”时入射角度变化的影响更为明显;存储单元输出电压峰值受漏极偏置电压调制,读数据“1”时调制效应更为明显.本工作为全耗尽绝缘体上硅氧化铪基铁电场效应晶体管存储单元抗单粒子效应加固设计提供理论依据和指导.

Ferroelectric field-effect transistor(FeFET)memory is currently a popular non-volatile memory.It has many advantages such as nonvolatility,better scalability,energy-efficient switching with non-destructive read-out and anti-radiation.To promote the application of FeFET in radiation environments,the single-event transient effect in HfO2-based fully-depleted silicon-on-insulator(FDSOI)FeFET memory cell is studied by technology computer aided design(TCAD)numerical simulation.The effects of different incident positions and angles of heavy ions and the drain bias voltage on the characteristics of the memory cell are analyzed.The results show that the corresponding polarization state in the HfO_(2) ferroelectric layer will not reverse regardless of the change for the incident position of heavy ions,but the transient change of the output voltage for the memory cell will be affected.The most sensitive area is close to the drain-body junction area.Moreover,with the decrease of the ion incidence angle,the peak of output voltage for the memory cell increases.And the effect of the incident angle change is more obvious when reading data is“0”rather than“1”.The peak of output voltage for the memory cell is modulated by the drain bias voltage,and the modulation effect is more obvious when reading data is“1”rather than“0”.The above findings provide theoretical basis and guidance for the anti-single event design of the FDSOI FeFET memory cell.