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某型霍尔开关集成电路贮存特性研究

Research on Storage Characteristics of a Hall Switch IC
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摘要 为研究某型霍尔开光集成电路的贮存特性,在寒温、亚湿热-入海口、亚湿热、热带海洋等4种气候下的库房开展了248个月的贮存试验,监测了B_(H-L)、B_(L-H)、B_(H)、V_(OL)、I_(CC)等5个性能参数。分析研究了性能参数退化特征及4种气候对性能参数影响的差异特点。结果显示V_(OL)和I_(CC)是贮存敏感参数,V_(OL)在贮存67个月后开始出现显著退化;4种气候对B_(H-L)、B_(L-H)、B_(H)、I_(CC)的影响有显著差异。B_(H-L)、B_(L-H)最早出现显著差异的贮存时间是18个月。最后得出V_(OL)是决定其贮存寿命的关键参数,B_(H-L)、B_(L-H)是影响其环境适应性的关键参数。 To study the storage characteristics of a Hall switch IC,storage tests were carried out for 248 months in four climates:cold climate,subtropical climate-estuary,subtropical climate,tropical matritime climate.Monitoring of 5 performance parameters including B_(H-L),B_(L-H),B_(H),V_(OL),I_(CC),etc.The degradation characteristics of performance parameters and the difference characteristics of four kinds of climate influences on performance parameters are analyzed and studied.V_(OL) and I_(CC) are storage sensitive parameters.V_(OL) begins to deteriorate significantly after 67 months of storage.The effects of four kinds of climate on B_(H-L),B_(L-H) and I_(CC) were significantly different.The earliest storage time for significant differences in performance parameters B_(H-L) and B_(L-H) is 18 months.V_(OL) is the key parameter to determine the storage life of the Hall switch IC.B_(H-)L,B_(L-H) are the key parameters affecting the environmental adaptability of the Hall switch IC.
作者 李坤兰 胡湘洪 王春辉 张博 LI Kun-lan;HU Xiang-hong;WANG Chun-hui;ZHANG Bo(China Electronic Products Reliability and Environment Institute,Guangzhou 510610;Guangdong Provincial Key Laboratory of Electronic Information Products Reliability Technology,Guangzhou 510610)
出处 《环境技术》 2022年第1期87-91,共5页 Environmental Technology
基金 2017年智能制造综合标准化项目“智能装备故障诊断和预测性维护共性技术标准研究及试验验证”。
关键词 霍尔开关集成电路 贮存试验 敏感参数 环境适应性 Hall Switch IC storage test sensitive parameters environmental adaptation
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  • 1高大元,何碧,何松伟,董海山,李敬明.Arrhenius方法的局限性讨论[J].含能材料,2006,14(2):132-135. 被引量:33
  • 2.霍尔元件及其应用[M].上海:上海科技出版社,1974..
  • 3赵负国.现代传感器集成电路(图象及磁传感器电路)[M].北京:人民邮电出版社,2000..
  • 4国家技术监督局.我国电压、电阻单位1990年改值工作实施方案[M].北京:中国计量出版社,1989..
  • 5黄良文,陈仁恩.统计学原理[M].北京:中央广播电视大学出版社,1998.257-281.
  • 6QJ2328A-2005,复合固体推进剂高温加速老化试验方法[S].
  • 7Popovic R,S, et al. The future of magnetic sensors. Sensors and Actuators, 1996,7156( 1 - 2) : 39 ~ 55.
  • 8Popovic R,S, et al. Integrated Hall-effect magnetic sensors. Sensors and Actuators,2001, A91:46 ~ 50.
  • 9Nakamura T, et al. Integrated magnetic sensors. Sensors and Achuators,1990, A23( 1 -3) :762 - 769.
  • 10Falk U. A symmetrical vertical Hall-effect device. Sensors and Actuators,1990, A22( 1 - 3) :751 ~ 753.

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