摘要
简介了蓝宝石化学机械抛光(CMP)的基本原理,从磨料、pH调节剂、表面活性剂、配位剂和其他添加剂方面概述了近年来蓝宝石CMP体系的研究进展,展望了蓝宝石CMP体系未来的研究方向。
The basic mechanism of chemical mechanical polishing(CMP)on sapphire surface was briefly introduced.The progress in research of slurry for CMP of sapphire was summarized in respects of abrasive,pH regulator,surfactant,complexing agent,and other additives.The future development directions of slurry for CMP of sapphire were prospected.
作者
屈明慧
牛新环
侯子阳
张银婵
朱烨博
闫晗
罗付
QU Minghui;NIU Xinhuan;HOU Ziyang;ZHANG Yinchan;ZHU Yebo;YAN Han;LUO Fu(Tianjin Key Laboratory of Electronic Materials and Devices,School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China)
出处
《电镀与涂饰》
CAS
北大核心
2022年第3期211-216,共6页
Electroplating & Finishing
基金
国家02科技重大专项课题(2016ZX02301003-004-007)
天津市特派员基金(18JCTPJC57000)
河北省自然科学基金(F2021202009)。
关键词
蓝宝石
化学机械抛光
抛光液
磨料
添加剂
综述
sapphire
chemical mechanical polishing
slurry
abrasive
additive
review
