高功率低损耗852 nm法布里-珀罗激光器的研制

Design of High Power Low Loss 852 nm Fabry-Perot Laser

理论分析了内部损耗、内量子效率对激光器输出功率的影响,并采用PICS3D软件对852 nm法布里-珀罗(FP)激光器进行综合优化设计。设计的器件具有小远场发散角、低内部损耗和高内量子效率等特点,并在大电流下能够实现稳定的高功率输出。实验制备了基横模852 nm FP激光器,内部损耗小于1 cm^(-1),快轴发散角为42.3°,慢轴发散角为5.6°,未镀膜情况下的单边输出功率为115 mW。理论分析结果和实验结果表明,在增加波导层的厚度同时对波导层非掺杂可以降低载流子导致的光的吸收,减小激光器内部损耗。通过增大上覆盖层AlGaAs材料中的Al组分和掺杂浓度,可以有效地抑制载流子泄漏,确保激光器实现高内量子效率。

The influence of internal loss and internal quantum efficiency on the output power of the laser is theoretically analyzed, and the comprehensive optimization design of the 852 nm Fabry-Perot(FP) laser is carried out by using PICS3 D software. The designed device has the characteristics of small far-field divergence angle, low internal loss, and high internal quantum efficiency, which can achieve stable and high power output under large current. The basic transverse mode 852 nm FP laser was fabricated with internal loss less than 1 cm^(-1), divergence angle of fast axis is 42.3°, divergence angle of slow axis is 5.6°, and unilateral output power of 115 mW without coating. The theoretical and experimental results show that while increasing the thickness of the waveguide layer and non-doping the waveguide can reduce the absorption of light caused by carriers and reduce the internal loss of the laser. By increasing the component of Al and the doping concentration in the AlGaAs material, the carrier leakage can be effectively suppressed and the high internal quantum efficiency can be ensured.