摘要
AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV^(181) Ta^(32+) ions,the electrical characteristics of the devices significantly decreased.The threshold voltage shifted positively by approximately 25%and the saturation currents decreased by approximately 14%.Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites,which increased the gate current tunneling probability.According to the pulsed output characteristics,the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation.The time constants of the induced surface traps were mainly less than 10μs.
作者
林正兆
吕玲
郑雪峰
曹艳荣
胡培培
房鑫
马晓华
Zheng-Zhao Lin;Ling Lü;Xue-Feng Zheng;Yan-Rong Cao;Pei-Pei Hu;Xin Fang;Xiao-Hua Ma(School of Microelectronics, Xidian University,Xi'an 710071,China;School of Mechano-Electronic Engineering, Xidian University,Xi'an 710071,China;Institute of Modern Physics, Chinese Academy of Sciences (CAS),Lanzhou 730000,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.12035019 and 11690042)
Science Challenge Projects(Grant No.TZ2018004)。