摘要
High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6 × 10^(9)cm·Hz^(1/2)/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.
作者
赵康伊
冯双龙
杨婵
申钧
付永启
Kangyi Zhao;Shuanglong Feng;Chan Yang;Jun Shen;Yongqi Fu(School of Physics,University of Electronic Science and Technology of China,Chengdu 610054,China;Chongqing Institute of Green and Intelligent Technology,Chinese Academy of Sciences,Chongqing 400714,China)
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 61605207, 61704172, and 61705229)
the Key Research and Development Plan of the Ministry of Science and Technology of China (Grant No. 2017YFE0131900)
the Western Light Program of the Chinese Academy of Sciences
Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018416)。
