功率超声微纳电子封装互连技术研究进展

Review of Power Ultrasonic Micro-nano Joining Technology for Electronic Manufacturing

新材料与工艺是推动先进电子制造与封装发展的关键,尤其针对高集成度、高温服役和高可靠性等大功率器件的互连难题,开发出面向高端微电子制造关键“卡脖子”技术的材料与工艺显得尤为紧迫。功率超声具有表面清洁、空化与声流等特性,可显著提高界面冶金连接能力,能有效克服传统瞬态液相连接反应时间长与温度高的难点,且能破解Cu、Al等金属互连过程中易氧化的痛点问题,并解决了SiC、Al_(2)O_(3)、AlN等陶瓷基板难润湿与纳米颗粒低温烧结驱动力不足的难题。结合本团队在该领域深耕多年的积累,聚焦功率超声应用于微纳连接方向,从超声固相键合、超声复合钎焊和超声纳米烧结互连等三个方面综述了面向电子制造中功率超声微纳连接技术的原理、方法、特点及实际应用场合,并分别从固相连接中引线键合、室温超声金属连接和超声增材制造等领域,到钎焊连接中超声低中高温软钎焊与超声瞬态液相连接等领域,提出适用于超声微纳连接的新型互连技术。最后,针对第三代半导体中大功率器件封装互连的迫切需求提出了超声纳米烧结连接新方法,并开发出具有高效低温连接高温服役的金属纳米焊膏新型互连材料,且对其接头力学、热学、电学,以及可靠性等进行了全面评估,也进一步总结了功率超声微纳连接技术的研究进展及趋势。

New materials and processes are the key to promote the development of advanced electronics packaging,especially for the interconnection problem of high integration,high temperature service,and high reliability.It is particularly urgent to explore materials and processes for the key“neck”technology.Power ultrasonic has the characteristics of surface cleaning,cavitation and sound flow,which can significantly improve the interface metallurgical connection ability,overcome the difficulties of the traditional transient liquid phase(TLP)connection,solve the pain point problem of easy oxidation in the interconnection process of Cu,Al,and the problems of difficult wetting of SiC,Al_(2)O_(3),and AlN ceramic substrates and insufficient driving force of low temperature sintering of nanoparticles were also solved.Combined with the accumulation of our team in this field for many years,focusing on the application of power ultrasonic in micro/nano connection direction,the principle,method,characteristics and practical application of power ultrasonic micro/nano connection technology were summarized:ultrasonic solid phase bonding,ultrasonic composite brazing and ultrasonic nano-sintering interconnection.A new interconnection technology is proposed in the solid phase connection fields of wire bonding,room temperature ultrasonic metal connection,and ultrasonic additive manufacturing,in the brazing fields of ultrasonic medium and high temperature,and in the soldering fields of ultrasonic TLP.Finally,the ultrasonic nano-sintering connection is raised to meet the urgent needs of high-power device interconnection in the 3th generation semiconductor,the corresponding interconnection material is developed,and its joint of mechanics,thermal,electrical,and reliability are comprehensively evaluated.The research progress and trend of power ultrasonic micro-nano connection technology are also summarized.