表面活化室温键合技术研究进展

Research Progress of Surface Activated Bonding at Room Temperature

随着半导体技术领域对低温晶圆键合技术的需求不断增长,表面活化键合(Surface activated bonding,SAB)技术开始被广泛研究。与其他键合方式相比,即使在室温下,表面活化键合也能完成牢固的键合,对于常规半导体、金属材料等非常有效。但对于SiO_(2)、有机物等材料,标准的表面活化键合并不十分适用,限制了其在特定领域的应用。近年来,研究者们提出两种改进型表面活化室温键合技术,通过在表面活化时或活化后向材料表面沉积一层纳米中间层,将晶圆的直接键合转化为纳米中间层间的键合。在键合机理方面,重点分析了材料的表面活化机制、界面原子成键机制以及环境因素对键合强度的影响等。通过对前期研究的分析总结进一步对比了三种表面活化键合技术的优缺点,期望可以推动表面活化键合技术在半导体技术领域的进一步广泛应用。

With the demand increase of low temperature wafer bonding technology in the semiconductor field,surface activated bonding(SAB)technology has been extensively studied.Compared with other bonding methods,SAB can achieve a strong bonding for most materials of metals and semiconductors even at room temperature without any heating process.However,SAB is not very suitable for SiO_(2) and polymer,which limits its application.In recent years,two modified surface activated bonding(modified SAB)methods have been developed.By depositing an intermediate nano-layer after/during surface activation,the original wafer bonding become the bonding between two inter-layers.In terms of bonding mechanism,the principle of both surface activation and bonding formation of interfacial atoms as well as the influence of environmental factors on bonding strength were analyzed.The advantages and disadvantages of the three SAB methods are compared through the analysis and summary of previous researches,which is expected to promote the further wide application of SAB technology in semiconductor field.