基于3D动态蒙特卡罗的POM分子闪存器件充放电仿真研究

3D KMC based simulation study on charge and discharge of POM molecular flash memory device

随着存储数据容量不断增加,需要更好地了解新型存储设备的工作原理才能快速发展下一代技术。基于多金属氧酸盐(POM)分子的新型闪存器件的优异特性为存储器件的持续小型化发展提供了可能。为此,文中以仿真框架NESS为基础,首次提出利用3D动态蒙特卡罗(KMC)研究基于[M18O54(SeO_(3))_(2)]^(4-)POM分子的闪存器件充放电特性,包括写、擦除和保持过程。基于POM分子闪存器件的模拟域,得到操作电压对写、擦除时间以及隧穿功耗的影响程度,从而分析器件保持特性。仿真结果表明:操作电压对隧穿功耗会产生显著影响,因此实现时间和功耗的折衷需选取合适的操作电压;同时,POM分子闪存器件具有显著的保持特性优势。

A better understanding of the working principles of novel memory devices is needed due to the increase in storage data capacity,so that the next generation of technology can be developed faster. The excellent charging and discharging characteristics of new flash memory devices based on polyoxometalate(POM)molecules can provide the possibility for continued miniaturization of storage devices. Therefore,based on the simulation framework NESS(nano electronic simulation software),3D KMC(kinetic Monte Carlo)is proposed for the first time to study the charge and discharge characteristics of flash memory devices based on [M18O54(SeO_(3))_(2)]^(4-)POM molecules,including writing,erasing and holding processes. Based on the simulation domain of the POM molecular flash memory device,the degree of influence of the operating voltage on the writing,erasing time and tunneling power consumption can be obtained,and the retention characteristics of the device can be analyzed. The simulation results show that the operating voltage has a significant impact on the tunneling power consumption,a suitable operating voltage should be selected to achieve a trade-off between time and power consumption,and POM molecular flash memory devices have significant advantages in retention characteristics.