不同雾流速率下α-Ga_(2)O_(3)薄膜的超声雾化化学气相沉积法外延生长

Mist-CVD epitaxial growth of α-Ga_(2)O_(3) film under different mist flow rates

研究了超声雾化化学气相沉积(Mist-CVD)法外延生长α-Ga_(2)O_(3)薄膜过程中通入雾流速率的调控及其对薄膜生长质量的影响。利用COMSOL Multiphysics软件仿真得到在0.1~0.2 m/s的雾流速率下基板表面具有稳定的雾流和较小的温度变化。对比了通入雾流速率为0.118、0.177和0.251 m/s时所生长的α-Ga_(2)O_(3)薄膜的差异。X射线衍射(XRD)表明在上述3种速率下均成功外延生长出α-Ga_(2)O_(3)薄膜。薄膜生长速率在一定范围内随着雾流速率的增加而提高,但当雾流通入速率过高时,α-Ga_(2)O_(3)薄膜表面发生翘曲开裂,且其光学带隙变小。

The regulation of mist flow rate during the epitaxial growth of α-Ga_(2)O_(3) film by mist chemical vapor deposition(Mist-CVD)and its effect on film quality were studied.The simulation by COMSOL Multiphysics software showed that the mist flow on the substrate surface would be stable and the substrate temperature changes slightly at a mist flow rate of 0.1-0.2 m/s.The difference between the α-Ga_(2)O_(3) films grown at mist flow rate 0.118,0.177,and 0.251 m/s was studied.The results of X-ray diffraction(XRD)showed that α-Ga_(2)O_(3) thin films were successfully epitaxially grown at all mist flow rates.The film growth rate was increased with the increasing of mist flow rate within a certain range,but when the mist flow rate was too high,the surface of α-Ga_(2)O_(3) film warps and cracks,and its optical bandgap became smaller.