CZTSSe/CdS界面载流子复合及其抑制研究进展

Research Progress of Carrier Recombination and Suppression Mechanism at CZTSSe/CdS Interface

铜锌锡硫硒/硫化镉(CZTSSe/CdS)界面处载流子的复合是限制铜锌锡硫硒太阳能电池光电转换效率进一步提升的重要原因之一.针对这一问题,首先介绍了CZTSSe/CdS界面的能带结构和元素互扩散对载流子传输的影响,然后对Zn(O,S)、ZnSnO、ZnMgO三种无Cd缓冲层材料以及Al_(2)O_(3)、二维Ti_(3)C_(2)T_(x)两种界面钝化层材料在CZTSSe/CdS界面优化方面的研究进展进行综述.最后,对该领域未来的发展进行展望.

The recombination of carriers at the CZTSSe/CdS interface is one of the important reasons that limit the further improvement of the photoelectric conversion efficiency of Cu_(2)ZnSn(S_(x),Se_(1-x))_(4) solar cells.In response to this problem,the band structure at the CZTSSe/CdS interface and the effect of element interdiffusion on carrier transport are introduced.The research status of Zn(O,S),ZnSnO and ZnMgO three Cd-free buffer layer materials in optimizing CZTSSe/CdS interface is reviewed.The application prospects of Al_(2)O_(3) and the emerging two-dimensional material Ti_(3)C_(2)T_(x) in CZTSSe/CdS interface passivation are discussed and the future development direction of this field is prospected.