基于纳米复合材料的光电化学传感器的制备

Preparation and application of photoelectrochemical sensors based on nanocomposites

针对传统C_(3)N_(4)半导体材料光催化活性和吸收系数都较低的问题,提出用纳米Ag进行改性,并以改性后的Ag-C_(3)N_(4)复合材料为检测基底,制备光电化学传感器,进而分析制备的光电传感器性能。结果表明:掺入Ag后,C_(3)N_(4)半导体材料光催化活性和吸收系数都有所提高;传感器最佳配方:Ag质量分数为3%,偏压0.5 V,四环素适配体浓度1μmol/L,传感器检测限为3.35 nmol/L。表现出良好的稳定性和选择性,能够用于四环素(TET)的定量检测。

In order to solve the problem of low photocatalytic activity and absorption coefficient of traditional semiconductor materials,nano Ag was used to modify them,and the modified composite materials were used to prepare photoelectrochemical sensors.The results showed that the photocatalytic activity and absorption coefficient of the semiconductor materials were improved after doping Ag;the optimum formula of the sensor is Ag content of 3%;bias voltage of 0.5 V;aptamer concentration of 1μmol/L;the detection limit of the sensor was 3.35 nmol/L;at the same time,it showed good stability and selectivity,and could be used for quantitative detection of TET.