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Photonic crystal nanobeam cavities based on 4H-silicon carbide on insulator 被引量:1

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摘要 The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.
作者 Liping Zhou Chengli Wang Ailun Yi Chen Shen Yifan Zhu Kai Huang Min Zhou jiaxiang Zhang Xin Ou 周李平;王成立;伊艾伦;沈晨;朱一帆;黄凯;周民;张加祥;欧欣(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;X0I Technology Co.,Ltd.,Shanghai 201899,China)
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2022年第3期24-29,共6页 中国光学快报(英文版)
基金 This work was supported by the National Key Research and Development Program of China(Nos.2017YFE0131300 and 2019YFB1803901) National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,12074400,11705262,and 11905282) Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032) Shanghai Key Basic Research Program(No.20JC1416200) Program of Shanghai Academic Research Leader(Nos.9XD1404600 and 19XD1404600) Shanghai Rising-Star Program(No.19QA1410600) Shanghai Sailing Program(No.18YF1428100) Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX03) Strategic Priority Research Program of Chinese Academy of Sci-ences(Nos.XDB24020400 and XDB0000000) Science and Technology Comission of Shanghai Municipality(No.16ZR1442600).
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  • 1Y.Akahane,T.Asano,B.-S.Song,and S.Noda,Nature 425,944(2003).
  • 2Y.Akahane,T.Asano,B.-S.Song,and S.Noda,Opt.Express 13,1202(2005).
  • 3T.Yoshie,A.Scherer,J.Hendrickson,G.Khitrova,H.M.Gibbs,G.Rupper,C.Ell,O.B.Shchekin,and D.G.Deppe,Nature 432,200(2004).
  • 4D.Englund,D.Fattal,E.Waks,G.Solomon,B.Zhang,T.Nakaoka,Y.Arakawa,Y.Yamamoto,and J.Vuckovic,Phys.Rev.Lett.95,013904(2005).
  • 5A.Badolato,K.Hennessy,M.Atatiire,J.Dreiser,E.Hu,P.M.Petroff,and A.Imamoglu,Science 308,1158(2005).
  • 6K.Hennessy,A.Badolato,M.Winger,D.Gerace,M.Atatüre,S.Gulde,S.Falt,E.L.Hu,and A.Imamoglu,Nature 445,896(2007).
  • 7A.Kress,F.Hofbauer,N.Reinelt,M.Kaniber,H.J.Krenner,R.Meyer,G.Bohm,and J.J.Finley,Phys.Rev.B 71,241304(2005).
  • 8W.-H.Chang,W.-Y.Chen,H.-S.Chang,T.-P.Hsieh,J.-I.Chyi,and T.-M.Hsu,Phys.Rev.Lett.96,117401(2006).
  • 9T.Kuroda,N.Ikeda,T.Mano,Y.Sugimoto,T.Ochiai,K.Kuroda,S.Ohkouchi,N.Koguchi,K.Sakoda,and K.Asakawa,Appl.Phys.Lett.93,111103(2008).
  • 10E.M.Purcell,Phys.Rev.69,681(1946).

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