基于T型结构的双频高效率功放设计

Design of High Efficiency Dual-band Power Amplifier Based on T-shaped Structure

通过分析传统功率放大器存在的频带限制问题,本文基于一种新型匹配电路和偏置电路设计了一款高效双频段功率放大器。设计采用一种T型结构方式作为双频功放的偏置电路和输出匹配结构,经理论推导和仿真优化,设计的双频阻抗变换器可实现两个频率上的两个不同复数阻抗到实数阻抗的变换。设计基于GaN HEMT晶体管CGH40010F,通过双频偏置电路实现了在两个工作频率下的扼流。仿真效果表明,该双频功放在1850MHz频点,输出功率高于37dBm、效率高于65%、增益保持在13dB以上,在4150MHz频点,输出功率高于39dBm,效率大于64%,增益在12dB以上,且端口驻波性能良好。

By analyzing the frequency band limitation of traditional power amplifier, this paper designs an efficient dual-band power amplifier based on a new matching circuit and bias circuit.The design adopts a T-shaped structure as the offset circuit and output matching structure of dual-frequency power amplifier. Through theoretical deduction and simulation optimization, the designed dual-frequency impedance converter can realize the conversion of two different complex impedances to real impedances at two frequencies.The design is based on GaN HEMT transistor CGH40010 F, and the choke at two operating frequencies is realized through a dual frequency offset circuit.The simulation results show that the dual-frequency power amplifier at 1850 MHz has an output power of more than 37 dBm, an efficiency of more than 65%, and a gain of more than 13 dB. At 4150 MHz, the output power of more than 39 dBm, an efficiency of more than 64%, and a gain of more than 12 dB, and the port standing-wave performance is good.