大尺寸碲锌镉基碲镉汞材料分子束外延技术研究

Research on molecular beam epitaxy growth of HgCdTe large CdZnTe substrate

针对高质量、大规模碲镉汞红外焦平面探测器需求的持续增加,本文开展了使用分子束外延方式在50 mm×50 mm(211)B碲锌镉衬底上外延碲镉汞材料技术的研究。通过对碲锌镉衬底改进湿化学腐蚀、碲锌镉衬底预处理、碲锌镉衬底缓冲层生长、碲锌镉基碲镉汞材料工艺开发等方面的研究,开发出了能够稳定获得碲锌镉基碲镉汞材料的工艺。材料质量、工艺重复性良好,获得的碲锌镉基碲镉汞材料双晶衍射半峰宽(35±5)arcsec,组分平均值为0.2160;碲镉汞薄膜材料厚度平均值为6.06μm。

As the increasing demand of high quality and large-scale HgCdTe Infrared detectors,the study on the growth of HgCdTe on 50 mm×50 mm CdZnTe(211)B substrate by molecular beam epitaxy is carried out.Through the research on the improvement of wet chemical pretreatment,pretreatment,growth of buffer layer,growth condition of HgCdTe,a stable process for obtaining HgCdTe growing on CdZnTe was developed.The material quality and process repeatability are good.The HgCdTe growing on CdZnTe substrate by the molecular beam epitaxy has a Full Width at Half Maximum(FWHM)of(35±5)arcsec,a composition of 0.2160,and a thickness of 6.06μm.