基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能

Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses

磷化铟(InP)量子点(QDs)由于其不含重金属元素和出色的光电特性,在量子点发光二极管(QLED)领域引起了广泛关注。本文以ZnSe和ZnS作为壳层来制备绿色InP/ZnSe/ZnS QDs,通过调控ZnSe壳层的厚度得到不同发光性能的QDs。当Se粉与Zn(St)_(2)的质量比为1∶15时,InP/ZnSe/ZnS QDs的荧光发射峰为522 nm,半峰宽为45 nm,荧光量子效率高达86%。同时制备了基于不同ZnSe壳层厚度的QLED,并利用真空蒸发的方式去除QDs薄膜中残留的有机溶剂,避免了高温退火对QDs性能的破坏,最终得到稳定工作QLED器件,其最佳外量子效率为2.2%。

Indium phosphide(InP)quantum dots(QDs)have drawn much attention in quantum dots light-emitting diodes(QLED)owing to their heavy-metal-free components and outstanding optics and electricity properties.In this paper,green InP/ZnSe/ZnS QDs were prepared with ZnSe and ZnS as the shell layers,QDs with various luminescence properties obtained by regulating the thickness of the ZnSe shell layer.When the mass ratio of Se powder to Zn(St)_(2) is 1∶15,the PL peak of InP/ZnSe/ZnS QDs is 522 nm,the half-peak width is 45 nm and the PLQY is as high as 86%.QLED based on different thicknesses of ZnSe shell layers was prepared,the residual organic solvent in the QDs films was removed by vacuum evaporation to avoid the destruction of QDs performance by high temperature annealing,and the best EQE of 2.2%was obtained for the QLED devices.