Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe^(10+)ions

Chemical disorder on the surface and lattice strain in GaN implanted by Fe^(10+)ions are investigated.In this study,3-MeV Fe^(10+)ions fluence ranges from 1×10^(13)ions/cm^(2)to 5×10^(15)ions/cm^(2)at room temperature.X-ray photoelectron spectroscopy,high-resolution x-ray diffraction,and high-resolution transmission electron microscopy were used to characterize lattice disorder.The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering.The change of tensile strain out-of-plane with fluence was measured.Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.