摘要
Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties.In this work,we study the structural,electronic,and optical properties of vertically stacked GaS-SnS_(2)heterostructure under the frame of density functional theory.We find that the stacked GaS-SnS_(2)heterostructure is a semiconductor with a suitable indirect band gap of 1.82 eV,exhibiting a type-Ⅱband alignment for easily separating the photo-generated carriers.The electronic properties of GaS-SnS_(2)hetero structure can be effectively tuned by an external strain and electric field.The optical absorption of GaS-SnS_(2)heterostructure is more enhanced than those of the GaS monolayer and SnS_(2)monolayer in the visible light region.Our results suggest that the GaS-SnS_(2)hetero structure is a promising candidate for the photocatalyst and photoelectronic devices in the visible light region.
作者
任达华
李强
钱楷
谭兴毅
Da-Hua Ren;Qiang Li;Kai Qian;Xing-Yi Tan(School of Information Engineering,Hubei Minzu University,Enshi 44500,China;Science of Physics and Technology,Wuhan University,Wuhan 430072,China;School of Advanced Materials and Mechatronic Engineering,Hubei Minzu University,Enshi 44500,China;Department of Physics,Chongqing Three Gorges University,Wanzhou 404100,China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.1186040026)
the Incubation Project for High-Level Scientific Research Achievements of Hubei Minzu University,China(Grant No.4205009)
the Fund of the Educational Commission of Hubei Province,China(Grant No.T201914)。
