Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor.The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas,excepting the series resistance.In the sub-threshold region,the contribution of series resistance on the sensitivity can be ignored due to the relatively small current.The sensitivity is dominated by the current density.A large anode area is helpful for enhancing the sensitivity at the same current level.In the fully turn-on region,the contribution of series resistance dominates the sensitivity.Unfortunately,a large series resistance degrades the temperature error and linearity,implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.