摘要
力致发光(ML)智能材料由于其独特的机械能-光能转换特性,有望用于应力传感器、新型显示和先进的柔性光电器件.然而,单一材料的窄波长范围ML发射特性限制了它们的应用范围.在这项工作中,我们报道了Sb掺杂的Ca Zn OS层状半导体中的宽带多模态发射.使用高温固相法合成了一系列具有不同Sb^(3+)掺杂浓度的Ca Zn OS层状结构粉末.Ca Zn OS:Sb^(3+)荧光粉实现了400–900 nm ML的宽谱发光范围,可调光致发光,两个发射峰位于465和620 nm,我们还系统研究了X射线诱导发光特性.我们还实现了Sb^(3+)和Bi^(3+)共掺杂样品的超宽暖白光ML发射.因此,这些ML荧光粉将有望用于智能照明、显示、可见应力传感器以及X射线成像和检测.
Mechanoluminescent(ML) smart materials are expected to be used in stress sensors, new displays, and advanced flexible optoelectronic devices, because of their unique mechanical-to-light energy conversion properties. However,the narrow-range ML emission characteristics of single materials limit their application scope. In this work, we report on the broadband multimodal emission in Sb-doped Ca Zn OS layered semiconductors. A series of Ca Zn OS layer-structured powders with different Sb^(3+) doping concentrations were synthesised using a high-temperature solid-phase method. The Ca Zn OS:Sb^(3+) phosphor achieved a wide range of ML spectra(400–900 nm), adjustable photoluminescence with double luminescent peaks located at 465 and 620 nm, and the X-rayinduced luminescence characteristics were systematically studied. We have also achieved ultra-broad warm white light ML emission of Sb^(3+) and Bi^(3+) co-doped samples. Therefore, it can be expected that these ML phosphors will be used in smart lighting, displays, visible stress sensors, and X-ray imaging and detections.
作者
李旭
郑元钿
马荣华
黄泽锋
王春枫
朱明炬
蒋福春
杜阳阳
陈献
黄勃龙
王锋
王博涵
王瑀
彭登峰
Xu Li;Yuantian Zheng;Ronghua Ma;Zefeng Huang;Chunfeng Wang;Mingju Zhu;Fuchun Jiang;Yangyang Du;Xian Chen;Bolong Huang;Feng Wang;Bohan Wang;Yu Wang;Dengfeng Peng(Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;College of Materials Science and Engineering,Shenzhen University,Shenzhen 518060,China;Department of Applied Biology and Chemical Technology,The Hong Kong Polytechnic University,Hung Horn,Kowloon,Hong Kong SAR 999077,China;Department of Materials Science and Engineering,City University of Hong Kong,Hong Kong,Hong Kong SAR 999077,China;International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education,SZU-NUS Collaborative Innovation Center for Optoelectronic Science&Technology,Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China)
基金
supported by the National Natural Science Foundation of China (61875136 and 52002246)
the Fundamental Research Project of Guangdong Province (2020A1515011315)
Shenzhen Fundamental Research Project (JCYJ20190808170601664)
the Science and Technology Innovation Project of Shenzhen Excellent Talents (RCBS20200714114919006)
the Scientific Research Foundation as Phase II construction of high-level University for the Youth Scholars of Shenzhen University 2019 (000002110223)。