一种新型异质三栅隧穿场效应晶体管的设计

Design of a Novel Hetero-junction Three-gate Tunnel Field-effect Transistor

隧穿场效应晶体管因其带带隧穿的工作机制、低的亚阈值摆幅、低的泄漏电流而成为当前主要器件领域研究的一个热点,但其开态电流低。因此,提出一种新型异质三栅隧穿场效应晶体管,器件的低栅和靠近源区的顶栅的功函数为4.15 eV,靠近漏区的顶栅的功函数为5.25 eV。器件的源区采用窄能隙材料砷化铟以提升器件在源-沟结的隧穿率,从而提升器件的开态电流以及器件的跨导特性。同时,器件的漏-源电容比较小,提升器件的增益带宽乘积、截止频率、跨导频率乘积等射频特性。研究表明,该器件可以应用到未来的低功耗及射频领域。

Tunnel field-effect transistor is a hot issue due to its band-band tunneling mechanism along with its advantages such as low subthreshold swing and leakage current, but it has problem of low on-state current.Therefore, a novel hetero-junction three-gate tunnel field-effect transistor is proposed in this paper.The work function of the bottom gate and the top gate close to the source are 4.15eV, and the work function of the top gate close to the drain region is 5.25eV. A narrow band-gap material, InAs has been used in the source region in order to improve the on-state current along with the transconductance characteristic due to improvement in tunneling rate at the source/channel interface. Moreover, the proposed device can reduce the gate-drain capacitance which leads to improvement in the radio performance such as gain bandwidth product, cut-off frequency, and transconductance frequency product. The results show that the proposed device can use in the future low-power and radio applications.