氢终端单晶金刚石反相器特性

Characteristics of hydrogen terminated single crystalline diamond logic inverter

超宽禁带半导体金刚石材料在高温、高压电路中具有重要的应用潜力.本研究采用微波等离子体化学气相沉积生长的单晶金刚石衬底制备了原子层沉积(atomic layer deposition, ALD)的Al_(2)O_(3)栅介质的氢终端金刚石金属氧化物半导体场效应晶体管(metal oxide semiconductor field effect transistor, MOSFET)器件,并与负载电阻互连,成功制备了金刚石反相器. 4μm栅长的氢终端金刚石器件实现了最大113.4 m A/mm的输出饱和漏电流,器件开关比高达109,并在不同负载电阻条件下均成功测得金刚石反相器的电压反转特性,反相器的最大增益为10.

Diamond has a wide band gap,high carrier mobility,and high thermal conductivity,thereby possessing great potential applications in high power,and high temperature electronics devices,and also inhigh temperature logic circuit.In this work,we fabricate a hydrogen terminated diamond metal-oxide-semiconductor field effect transistor(MOSFET)by using the atomic layer deposition grown Al_(2)O_(3) as a gate dielectric and passivation layer.The device has a gate length and width of 4μm and 50μm,respectively.The device delivers a maximum output current of about 113.4 mA/mm at VGS of-6 V and an ultra-high on/off ratio of 109.In addition,we fabricate three resistors,respectively,with an interelectrode distance of 20,80 and 160μm,corresponding to the resistance value of 16.7,69.5 and 136.4 kΩ,respectively.The logic inverter is realized by combining the MOSFET with the load resistance,and the characteristics of the logic inverter are demonstrated successfully,which indicates that the diamond MOSFET has great potential applications in future logic circuits.