超高压碳化硅N沟道IGBT器件的设计与制造

Design and Fabrication of Ultra-High Voltage SiC N-Channel IGBT

自主设计和制备了一种耐压超过20 kV的超高压碳化硅(SiC)N沟道绝缘栅双极晶体管(Insulated Gate Bipolar Transistor,IGBT)器件。通过仿真设计优化了器件结构,同时结合自支撑衬底剥离技术、背面激光退火技术以及载流子寿命提升技术,成功在N型SiC衬底上制备了SiC N沟道IGBT器件。测试结果表明,该器件阻断电压为20.08 kV时,漏电流为50μA。当栅电极施加20 V电压,集电极电流为20 A时,器件的导通电压为6.0 V,此时器件的微分比导通电阻为27 mΩ·m^(2)。该值仅为15 kV SiC金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)比导通电阻的1/7,充分显示出SiC N沟道IGBT器件作为双极型器件在高阻断电压、高导通电流密度等方面的突出优势。

An ultra-high voltage silicon carbide(SiC)N-channel insulated gate bipolar transistor(IGBT)with a blocking voltage of 20 kV is designed and fabricated.The device structure is optimized by simulation design,meanwhile a SiC N-channel IGBT is fabricated successfully on N-type SiC substrates combined with substrates grinding,laser anneal and carrier lifetime enhancement.A blocking voltage of 20.08 kV has been demonstrated with a leakage current of 50μA.The on-state characteristics of the N channel SiC IGBT shows a drop voltage of6.0 V at a collector current of 20 A when the gate voltage is 20 V,and there is a differential specific on-resistance of 27 mΩ·cm^(2)on this point.This value is only 1/7 of the specific on-resistance of 15 kV SiC metal oxide semiconductor field effect transistor(MOSFET),which totally shows the outstanding advantages of SiC N-channel IGBTs in high blocking voltage and high conduction current density.