Polarization-sensitive and wide-spectrum photovoltaic detector based on quasi-1D ZrGeTe_(4)nanoribbon

Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)region.However,the narrow bandgap can cause noise owing to the high dark current in photodetectors.This article reports quasi-1D ZrGeTe_(4)nanoribbonbased photodetectors with low dark current and broadband polarization detection.The photodetector was fabricated by evaporating 50-nm-thick Au electrodes on a ZrGeTe_(4)nanoribbon.Benefiting from the photovoltaic characteristics in the ZrGeTe_(4)nanoribbon and Au electrodes,these photodetectors can operate without bias voltage,with decreased dark current,and improved device performance.Furthermore,the quasi-1D ZrGeTe_(4)nanoribbon-based photodetectors demonstrate a polarization sensitivity in a broadband from visible(VIS)to the NIR region,such as a high photoresponsivity of 625.65 mA W1,large external quantum efficiency of 145.9%at 532 nm,and photocurrent anisotropy ratio of 2.04 at 1064 nm.They exhibit a novel perpendicular optical reversal of 90in polarization-sensitive photodetection,angle-resolved absorption spectra,and azimuth-dependent reflectance difference microscopy(ADRDM)from VIS to the NIR region,as opposed to other nanoribbon-based polarization-sensitive photodetectors.This work paves the way for utilizing photovoltaic photodetectors based on low-dimensional materials for broad-spectrum polarized photodetection.