MoO_(3)背界面修饰对柔性CZTSSe太阳能电池性能的影响

Effect of MoO_(3) back interface modification on the performance of flexible CZTSSe solar cells

针对高温硒化过程中铜锌锡硫硒(CZTSSe)太阳能电池背界面不稳定问题,提出在柔性Mo衬底上蒸镀MoO_(3)薄层,阻隔CZTSSe吸收层与Mo的直接接触,抑制背界面处CZTSSe吸收层与Mo发生分解反应.材料表征及性能测试表明,MoO_(3)修饰能促进背界面处CZTSSe吸收层的生长,提高CZTSSe吸收层的结晶质量,实现了CZTSSe吸收层由双层结构向“三明治”结构的转变.实验证明,加入10 nm的MoO_(3)薄层,开路电压与短路电流有大幅提升,能得到最佳的器件效率,效率从6.62%提升到7.41%.

To solve the instability of the back interface of Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells in the process of high temperature selenization,a thin MoO_(3)layer deposited on a flexible Mo substrate was proposed to block the direct contact between the CZTSSe absorber layer and Mo,and suppress the decomposition of CZTSSe at the back interface.Material characterization and performance testing show that the MoO_(3)modification promotes the growth of the CZTSSe absorber layer at the back interface,improves the crystalline quality of the CZTSSe absorber layer,and realizes the transformation of the CZTSSe absorber layer from a double-layer structure to a"sandwich"structure.Experiments have proved that adding a 10 nm thick MoO_(3)thin layer greatly increases the open circuit voltage and short circuit current,and can obtain the best efficiency of the device,which increases from 6.62%to 7.41%.